advanced power n-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss 30v simple drive requirement r ds(on) 3.2m fast switching characteristic i d 22.8a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice rating 80 30 + 12 22.8 AP2R803GM-HF halogen-free product 201212111 1 parameter drain-source voltage gate-source voltage continuous drain current 3 , v gs @ 10v continuous drain current 3 , v gs @ 10v 18.3 pulsed drain current 1 2.5 parameter total power dissipation operating junction temperature range -55 to 150 thermal data storage temperature range -55 to 150 ap2r803 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 3.2 m ? v gs =4.5v, i d =10a - - 4.6 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 77 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge i d =20a - 28 45 nc q gs gate-source charge v ds =15v - 5.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 13 - nc t d(on) turn-on delay time v ds =15v - 13 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =3.3 ? -51- ns t f fall time v gs =10v - 25 - ns c iss input capacitance v gs =0v - 3000 4800 pf c oss output capacitance v ds =15v - 700 - pf c rss reverse transfer capacitance f=1.0mhz - 290 - pf r g gate resistance f=1.0mhz - 1.4 2.8 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.1a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 40 - ns q rr reverse recovery charge di/dt=100a/s - 45 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP2R803GM-HF 2 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad.
a p2r803gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 2 2.4 2.8 3.2 3.6 4 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =10a t a =25 o c 0 40 80 120 160 200 240 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.9 1.4 1.9 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 20a v g =10v 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =250ua
AP2R803GM-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0 2 4 6 8 10 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v i d =20a 0 500 1000 1500 2000 2500 3000 3500 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100m s 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 40 80 120 160 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 4 8 12 16 20 24 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) t j = -40 o c
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